Silicon Carbide Ingot Manufacturer Supply 6 Inch SiC Wafer

Silicon Carbide Ingot Manufacturer Supply 6 Inch SiC Wafer

Homray Material Technology offer low MPD SiC Substrate Wafer, production grade ?0.5cm², ultralow MPD grade ?0.2cm². Silicon carbide has high energy conversion efficiency, and will not decrease with the increase of frequency, silicon carbide device operating frequency can reach 10 times of silicon based devices, the same specification of silicon carbide MOSFET total energy loss is only 30% of silicon based IGBT. Silicon carbide materials will gradually replace silicon in the fields of high temperature, high frequency and high frequency, and play an important role in 5G communications, aerospace, new energy vehicles and smart power grids.